Organic light-emitting display apparatus and fabrication method thereof

ABSTRACT

An organic light-emitting display apparatus includes a display substrate and a thin film encapsulation layer on the display substrate. The display substrate includes at least one hole, a thin film transistor, a light-emitting portion electrically connected to the thin film transistor, and a plurality of insulating layers. The light-emitting portion includes a first electrode, an intermediate layer, and a second electrode. The display substrate includes an active area, an inactive area between the active area and the hole, and a plurality of insulating dams. Each insulating dam includes at least one layer. The inactive area includes a first area different from a laser-etched area and a second laser-etched area.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.16/927,872, filed Jul. 13, 2020, now U.S. Pat. No. 11,,251,401, which isa continuation of U.S. patent application Ser. No. 16/734,275, filedJan. 3, 2020, now U.S. Pat. No. 10,714,707, which is a continuation ofU.S. patent application Ser. No. 16/177,617, filed Nov. 1, 2018, nowU.S. Pat. No. 10,529,952, which is a continuation of U.S. patentapplication Ser. No. 15/427,693, filed Feb. 8, 2017, now U.S. Pat. No.10,135,025, which claims priority to and the benefit of Korean PatentApplication No. 10-2016-0017771, filed Feb. 16, 2016, the entire contentof all of which is incorporated herein by reference.

BACKGROUND 1. Field

One or more embodiments herein relate to an organic light-emittingdisplay apparatus and a method for fabricating an organic light-emittingdisplay apparatus.

2. Description of the Related Art

Smart phones, laptop computers, digital cameras, camcorders, portableinformation terminals, tablet personal computers, desktop computers,televisions, outdoor advertising billboards, display apparatuses fordisplay, dashboards for vehicles, head-up displays, and other electronicdevices have displays. Attempts are continually being made to reduce thethickness of displays. Now, flexible display devices are being madebecause they are easy to carry and have various shapes.

SUMMARY

In accordance with one or more other embodiments, an organiclight-emitting display apparatus includes a display substrate having atleast one hole and including a thin film transistor; a light-emittingportion electrically connected to the thin film transistor, thelight-emitting portion including a first electrode, an intermediatelayer, and a second electrode; and a plurality of insulating layers; anda thin film encapsulation layer on the display substrate, wherein thedisplay substrate includes an active area, an inactive area between theactive area and the hole, and a plurality of insulating dams, eachincluding at least one layer, and wherein the inactive area includes afirst area different from a laser-etched area and a second laser-etchedarea.

The insulating dams may be spaced apart and surround the active area.The first area may include the insulating dams, the intermediate layermay be on an outer surface of each of the insulating dams, the secondarea may be between neighboring insulating dams and an outermost area ofthe insulating dams, and the second area may exclude the intermediatelayer. The second electrode may be on the intermediate layer that is onthe outer surface of each of the insulating dams.

The first area may include the insulating dams and an area betweenneighboring insulating dams, the intermediate layer may be on an outersurface of each of the insulating dams and between the neighboringinsulating dams, the second area may include an outermost area of theinsulating dams, and the second area may exclude the intermediate layer.The intermediate layers may be on the outer surfaces of the insulatingdams and between the neighboring insulating dams are connected to eachother. The second electrode may be on the intermediate layer on theouter surface of each of the insulating dams and between the neighboringinsulating dams.

The intermediate layer may include an emissive layer at a sub-pixel anda common layer across the active area and the inactive area, and thecommon layer may be separately arranged in the active and inactiveareas. The second electrode may be across the active area and theinactive area, and portions of the second electrode may be separatelyarranged in the active area and the inactive area. The insulating layermay extend across the active area and the inactive area and includes atleast one layer stacked in a direction crossing the display substrate,and the insulating dams may be on the insulating layer.

The thin film transistor may include a semiconductor active layer and agate electrode, a source electrode, and a drain electrode, theinsulating layer may be between the semiconductor active layer and atleast one of the gate electrode, the source electrode, or the drainelectrode, and the insulating dams may include at least one of apassivation layer covering the thin film transistor, a pixel defininglayer defining a sub-pixel including the light-emitting portion, and aspacer on the second electrode.

The apparatus may include a plurality of laser shield layers on at leastone insulating layer corresponding to the second laser-etched area inthe inactive area. The laser shield layers may be on differentinsulating layers, and at least part of the laser shield layers mayoverlap one another. Each of the laser shield layers may include areflective layer. The hole area may be in and surrounded by the activearea.

In accordance with one or more other embodiments, a method forfabricating an organic light-emitting display apparatus includespreparing a display substrate including at least one hole, a thin filmtransistor, an organic light-emitting device electrically connected tothe thin film transistor, and a plurality of insulating layers, theorganic light-emitting device includes a first electrode, anintermediate layer, and a second electrode; forming a plurality ofinsulating dams, each of the insulating dams including at least onelayer, the insulating dams formed in an inactive area of the displaysubstrate, the display substrate including an active area and theinactive area between the active area and a hole area including the atleast one hole; forming an intermediate layer across the active andinactive areas; selectively forming the second electrode across theactive and inactive areas; performing laser etching on an area in theinactive area other than an area including the insulating dams; andforming a thin film encapsulation layer on the display substrate.

The method may include removing the intermediate layer by irradiating alaser beam to at least one area of an area between neighboringinsulating dams or an outermost area of the insulating dams, whereinportions of the intermediate layer in the active area and the inactivearea may be separated from each other.

The method may include removing the second electrode in an area wherethe intermediate layer is removed during the laser etching, whereinportions of the second electrode in the active area and the inactivearea may be separated from each other. The method may include, after theintermediate layer is formed, selectively forming a second electrodeshield layer that shields formation of the second electrode in theinactive area, wherein the second electrode may not be formed in an areaincluding the second electrode shield layer. The method may includeforming a plurality of laser shield layers on at least one insulatinglayer corresponding to the area that is laser etched, wherein a laserbeam may be reflected from the laser shield layers.

BRIEF DESCRIPTION OF THE DRAWINGS

Features will become apparent to those of skill in the art by describingin detail exemplary embodiments with reference to the attached drawingsin which:

FIG. 1 illustrates an embodiment of a display apparatus;

FIG. 2 illustrates a view along section line A-A in FIG. 1 ;

FIG. 3 illustrates another embodiment of a display apparatus;

FIG. 4 illustrates another embodiment of a display apparatus;

FIG. 5 illustrates a cross-sectional view of the display apparatus inFIG. 4 ;

FIG. 6 illustrates a cross-sectional view of a display apparatusaccording to another embodiment;

FIG. 7A illustrates an embodiment of an operation for performing laseretching on a display substrate, FIG. 7B illustrates a state of thedisplay substrate after laser etching, and FIG. 7C illustrates anembodiment of a thin film encapsulation layer on the display substrateof FIG. 7B;

FIG. 8 illustrates another embodiment of a display apparatus; and

FIGS. 9 to 11 illustrate additional embodiments of display apparatuses.

DETAILED DESCRIPTION

Example embodiments will now be described with reference to theaccompanying drawings; however, they may be embodied in different formsand should not be construed as limited to the embodiments set forthherein. Rather, these embodiments are provided so that this disclosurewill be thorough and complete, and will fully convey exemplaryimplementations to those skilled in the art. The embodiments (orportions thereof) may be combined to form additional embodiments.

In the drawings, the dimensions of layers and regions may be exaggeratedfor clarity of illustration. It will also be understood that when alayer or element is referred to as being “on” another layer orsubstrate, it can be directly on the other layer or substrate, orintervening layers may also be present. Further, it will be understoodthat when a layer is referred to as being “under” another layer, it canbe directly under, and one or more intervening layers may also bepresent. In addition, it will also be understood that when a layer isreferred to as being “between” two layers, it can be the only layerbetween the two layers, or one or more intervening layers may also bepresent. Like reference numerals refer to like elements throughout.

When an element is referred to as being “connected” or “coupled” toanother element, it can be directly connected or coupled to the anotherelement or be indirectly connected or coupled to the another elementwith one or more intervening elements interposed therebetween. Inaddition, when an element is referred to as “including” a component,this indicates that the element may further include another componentinstead of excluding another component unless there is differentdisclosure.

FIG. 1 illustrates an embodiment of a display apparatus 100, and FIG. 2illustrates a cross-sectional view taken along line A-A in FIG. 1 .Referring to FIGS. 1 and 2 , the display apparatus 100 may be an organiclight-emitting display apparatus including an active area AA. A holearea HA may be in the active area AA. The hole area HA may be surroundedby the active area AA.

The display apparatus 100 may include a display substrate 101. Aplurality of display portions (e.g., first and second display portions102 and 103) may be on the display substrate 101. A thin filmencapsulation (TFE) layer 112 may be on the first and second displayportions 102 and 103.

A first display area DA1 and a second display area DA2 may be on thedisplay substrate 101. The first display area DA1 may be connected tothe second display area DA2. The hole area HA may be in an areasurrounded by the first display area DA1 and the second display areaDA2. The first display portion 102 may be in the first display area DA1.A first thin film encapsulation (TFE) layer 104 may be on the firstdisplay portion 102. The first TFE layer 104 may include a firstinorganic film 105, a first organic film 106 on the first inorganic film105, and a second inorganic film 107 on the first organic film 106.

The second display portion 103 may be in the second display area DA2. Asecond thin film encapsulation (TFE) layer 108 may be on the seconddisplay portion 103. The second TFE layer 108 may include a firstinorganic film 109, a first organic film 110 on the first inorganic film109, and a second inorganic film 111 on the first organic film 110. Inan embodiment, the first display portion 102 may be connected to thesecond display portion 103. In an embodiment, the first TFE layer 104may be connected to the second TFE layer 108.

The hole area HA may penetrate through the display substrate 101 and theTFE layer 112. The hole area HA may be in the active area AA includingthe first display area DA1 and the second display area DA2. Anelectronic part 113 (e.g., a camera module, a speaker unit, or a sensorsuch as an illumination sensor or a home button) may be in the hole areaHA. In one embodiment, a touch screen, a polarized layer, and/or a coverwindow may be in the hole area HA.

FIG. 3 illustrates another embodiment of a display apparatus 300. Inthis embodiment, a portion where the hole area HA is arranged in FIG. 1is described. A structure of the display apparatus 300 may correspond tothe structure of the display apparatus 100 of FIG. 1 , except theportion where the hole area HA is arranged.

Referring to FIG. 3 , the display apparatus 300 may include a displaypanel 301, which may include a thin film encapsulation layer covering adisplay substrate. The active area AA may be on the display panel 301.The cut portion 302 may be arranged in the display panel 301. The cutportion 302 may be formed by cutting at least part of the display panel301. For example, the cut portion 302 may be formed by cutting partialareas of an upper end and a lower end of the display panel 301.

The hole area HA may be arranged in the upper and lower ends of thedisplay panel 301 due to the cut portion 302. The hole area HA may be anarea formed due to the cut portion 302. The hole area HA may penetratethrough the display substrate and the thin film encapsulation layer, asin FIG. 2 .

The hole area HA is in the active area AA and at least part of the holearea HA may be surrounded by the active area AA. An electronic part suchas a camera module, a speaker unit, a sensor, or a button may bearranged in the hole area HA. In one embodiment, a touch screen, apolarized layer, or a cover window may be in the hole area HA.

FIG. 4 illustrates another embodiment of a structure 400 including adisplay apparatus 410, and FIG. 5 is a cross-sectional view of FIG. 4 .Referring to FIGS. 4 and 5 , the structure 400 may include the displayapparatus 410 and a mechanical part 460. The display apparatus 410 maybe in an upper side. The mechanical part 460 may be located in a lowerside. In an embodiment, the mechanical part 460 may be a watch.

The display apparatus 410 may include a display substrate 411. A displayportion 412 may be on the display substrate 411. A hole 413 may be atthe center of the display substrate 411. The hole 413 may penetratethrough the display apparatus 410. The hole 413 may be circular or mayhave another shape. Only one hole 413 may be arranged at the center ofthe display apparatus 410. In another embodiment, the display apparatus410 may include a plurality of holes at the center or another location.

An inactive area (IAA) 414 may be between the display portion 412 andthe hole 413. The display portion 412 surround the hole 413. Theinactive area 414 may be an area for structural stability of the displayapparatus 410 during a process of forming a plurality of devices on thedisplay substrate 411. An inactive area 415 may be further provided atthe outermost area of the display substrate 411.

The mechanical part 460 may include a watch main body 461. The displaysubstrate 411 may contact the watch main body 461. A watch shaft 462 maybe inserted through the hole 413 of the display substrate 411. An arbor463 may be placed on the watch shaft 462. A needle indicator 464 such asan hour hand 464 a and a minute hand 464 b may be in the arbor 463. Theneedle indicator 464 on the watch shaft 462 may be above the displaysubstrate 411. The structure 400 may implement a desired screen usingthe display apparatus 410 and also a highly value-added watch usingmechanical part 460.

FIG. 6 is a cross-sectional view of a part of a display apparatus 600according to another embodiment. The display apparatus 600 maycorrespond to a portion cut along a line B-B of the structure 400 inFIG. 4 .

Referring to FIG. 6 , the display apparatus 600 may include a displaysubstrate 601 and a TFE layer 632 covering the display substrate 601.The display substrate 601 may include the active area AA for display animage and the inactive area IAA extending to the outside of active areaAA. The active area AA may include a circuit area (CA). The inactivearea IAA surrounds the active area AA.

The hole area HA may be outside the inactive area IAA. The hole area HAmay correspond to the hole area HA of FIGS. 1 to 5 where the hole isarranged. The inactive area IAA may be between the active area AA andthe hole area HA.

The display substrate 601 may be a glass substrate, a polymer substrate,a flexible film, a metal substrate, or a composite substrate thereof.The display substrate 601 may be transparent, opaque, orsemitransparent. In an embodiment, the display substrate 601 may be apolymer material such as polyimide (PI), polycarbonate (PC),polyethersulphone (PES), polyethylene terephthalate (PET),polyethylenenaphthalate (PEN), polyarylate (PAR), and fiber glassreinforced plastic (FRP).

A barrier layer 602 may be on the display substrate 601. The barrierlayer 602 may cover an entire upper surface of the display substrate601. The barrier layer 602 may be formed of an inorganic material or anorganic material. The barrier layer 602 may be a single-layer film or amultilayer film.

In the active area AA, a plurality of thin film transistors (TFTs) maybe on the barrier layer 602. The TFTs may be in an area for display animage and an area where a circuit pattern is formed. In the presentembodiment, two TFTs are arranged on the display substrate 601. Thenumber and/or type of the TFTs may different in another embodiment.

In one embodiment, a first thin film transistor TFT1 may include a firstsemiconductor active layer 603, a first gate electrode 612, a firstsource electrode 616, and a first drain electrode 617. The firstsemiconductor active layer 603 may include a source region 604 and adrain region 605 with doped N-type impurity ions or P-type impurityions. A channel region 606 that is not doped with impurities may bebetween the source region 604 and the drain region 605. A first gateinsulating film 611 may be between the first semiconductor active layer603 and the first gate electrode 612. The first semiconductor activelayer 603 may be insulated from the first gate electrode 612.

The second thin film transistor TFT2 may include a second semiconductoractive layer 607, a second gate electrode 614, a second source electrode618, and a second drain electrode 619. The second semiconductor activelayer 607 may include a source region 608, a drain region 609, and achannel region 610. The first gate insulating film 611 and a second gateinsulating film 613 may be between the second semiconductor active layer607 and the second gate electrode 614. The second semiconductor activelayer 607 may be insulated from the second gate electrode 614. The firstgate insulating film 611 and the second gate insulating film 613 may bestacked in a direction crossing the display substrate 601.

The first gate electrode 612 and the second gate electrode 614 may notbe on the same layer by the first gate insulating film 611 and thesecond gate insulating film 613. Accordingly, even when the first thinfilm transistor TFT1 and the second thin film transistor TFT2 arearranged close to each other, the first gate electrode 612 and thesecond gate electrode 614 may reduce mutual interference and moredevices may be arranged in the same area on the display substrate 601.

The first gate insulating film 611 and the second gate insulating film613 may be formed of the same material. In an embodiment, the first gateinsulating film 611 and the second gate insulating film 613 may beinorganic films.

The first gate electrode 612 and the second gate electrode 614 may beformed of the same material. In an embodiment, the first gate electrode612 and the second gate electrode 614 may include a metal memberexhibiting superior conductivity. For example, the first gate electrode612 and the second gate electrode 614 may be formed of a metal materialsuch as Au, Ag, Cu, Ni, Pt, Pd, Al, Mo, or Cr. In another embodiment,the first gate electrode 612 and the second gate electrode 614 may beformed of an alloy such as Al:Nd or Mo:W. The first gate electrode 612and the second gate electrode 614 may include a single film or amultilayer film.

An interlayer insulating film 615 may be on the second gate electrode614. The interlayer insulating film 615 may include an inorganicmaterial or an organic material.

The first source electrode 616 and the first drain electrode 617 may bearranged on the interlayer insulating film 615. The first sourceelectrode 616 and the first drain electrode 617 may be connected to thefirst semiconductor active layer 603 via contact holes. Also, the secondsource electrode 618 and the second drain electrode 619 may be on theinterlayer insulating film 615. The second source electrode 618 and thesecond drain electrode 619 may be connected to the second semiconductoractive layer 607 via contact holes.

The first source electrode 616, the first drain electrode 617, thesecond source electrode 618, and the second drain electrode 619 may beformed of the same material. In an embodiment, the first sourceelectrode 616, the first drain electrode 617, the second sourceelectrode 618, the second drain electrode 619 may be formed of metal, analloy, a metal nitride, a conductive metal oxide, or a transparentconductive material.

A capacitor 620 may be on the display substrate 601. In one embodiment,a plurality of capacitors 620 may be included. The capacitor 620 mayinclude the second gate insulating film 613 between a first capacitorelectrode 621 and a second capacitor electrode 622. The first capacitorelectrode 621 may be formed of the same material as the first gateelectrode 612. The second capacitor electrode 622 may be formed of thesame material as the second gate electrode 614.

A passivation layer 623 may cover the thin film transistors TFT1 andTFT2 and the capacitor 620. The passivation layer 623 may be on theinterlayer insulating film 615 and may be formed of an inorganicmaterial or an organic material.

The first thin film transistor TFT1 may be electrically connected to anorganic light emitting device (OLED) 625 that is a light-emittingportion for displaying an image. The OLED 625 may be arranged on thepassivation layer 623.

The OLED 625 may include a first electrode 626, an intermediate layer627, and a second electrode 628. The first electrode 626 functions as ananode and may include various conductive materials. The first electrode626 may include a transparent electrode or a reflective electrode. Forexample, when the first electrode 626 is a transparent electrode, thefirst electrode 626 may be a transparent conductive film. When the firstelectrode 626 is a reflective electrode, the first electrode 626 mayinclude a reflective film and a transparent conductive film on thereflective film.

A pixel defining layer 624 may be on the passivation layer 623. Thepixel defining layer 624 may cover part of the first electrode 626. Thepixel defining layer 624 defines a light-emitting area of each sub-pixelby surrounding the first electrode 626 along an edge thereof. The firstelectrode 626 may be patterned for each sub-pixel. The pixel defininglayer 624 may include an organic material or an inorganic material. Thepixel defining layer 624 may include a single-layer film or multilayerfilm.

The intermediate layer 627 may be in an area where the first electrode626 is exposed, by etching part of the pixel defining layer 624. Theintermediate layer 627 may include an emissive layer 627 a and a commonlayer 627 b. The emissive layer 627 a may be at each sub-pixel. Thecommon layer 627 b may be across the active area AA and the inactivearea IAA. The common layer 627 b may include at least one of a holeinjection layer (HIL), a hole transport layer (HTL), an electrontransport layer (ETL), or an electron injection layer (EIL). In anembodiment, the intermediate layer 627 may include the emissive layer627 a and further include other various functional layers.

The second electrode 628 may function as a cathode arranged across theactive area AA and the inactive area IAA. The second electrode 628 mayinclude a transparent electrode or a reflective electrode. For example,when the second electrode 628 may be a transparent electrode, the secondelectrode 628 may include a conductive layer including metal having asmall work function and a compound thereof and a transparent conductivefilm on the conductive layer and formed of a material for a transparentelectrode. When the second electrode 628 is a reflective electrode, thesecond electrode 628 may include a conductive layer that includes metaland a compound thereof.

In an embodiment, a spacer 631 may be on the pixel defining layer 624along an edge of a sub-pixel. The spacer 631 may be between neighboringsub-pixels. The common layer 627 b and the second electrode 628 may bestacked on an outer surface of the spacer 631.

In an embodiment, a plurality of sub-pixels may be arranged on thedisplay substrate 601. For example, a red, green, blue, or white colormay be implemented by each sub-pixel.

Various circuit patterns may be in the circuit area CA. For example,various circuit patterns such as a power supply pattern or ananti-static electricity pattern may be arranged in the circuit area CA.A power wiring 629 may be on the interlayer insulating film 615. Thepower wiring 629 may be a wiring to which power is externally applied.The power wiring 629 may be formed of the same material as the firstsource electrode 616, the first drain electrode 617, the second sourceelectrode 618, and the second drain electrode 619. In an embodiment, thepower wiring 629 may be a triple structure of titanium (Ti)/aluminum(AD/titanium (Ti).

A circuit wiring 630 may be on the passivation layer 623. The circuitwiring 630 may be formed of the same material as the first electrode626. The power wiring 629 and the circuit wiring 630 may be on differentlayers. One end of the circuit wiring 630 may contact the power wiring629. At least part of the circuit wiring 630 may overlap the powerwiring 629. One end of the common layer 627 b may be on the circuitwiring 630. The second electrode 628 may be on the one end of the commonlayer 627 b.

The TFE layer 632 may be above the display substrate 601. The TFE layer632 may cover the active area AA. Also, the TFE layer 632 may cover atleast part of the inactive area IAA. The TFE layer 632 may include aplurality of inorganic films 633 and a plurality of organic films 634that are alternately stacked. For example, the inorganic film 633 mayinclude a first inorganic film 635, a second inorganic film 636, and athird inorganic film 637. The organic film 634 may include a firstorganic film 638 and a second organic film 639.

In the inactive area IAA, the barrier layer 602 may be on the displaysubstrate 601. The barrier layer 602 may extend across the active areaAA and the inactive area IAA. First to third insulating layers 645 to647 having at least one layer in the direction crossing the displaysubstrate 601 may be on the barrier layer 602. The first to thirdinsulating layers 645 to 647 may be stacked in the direction crossingthe display substrate 601.

In an embodiment, the first to third insulating layers 645 to 647 mayextend across the active area AA and the inactive area IAA. The firstinsulating layer 645 may be on the barrier layer 602. The firstinsulating layer 645 may be on the same layer as the first gateinsulating film 611. The first insulating layer 645 may be formed withthe first gate insulating film 611 in the same process. The firstinsulating layer 645 may be formed of the same material as the firstgate insulating film 611.

The second insulating layer 646 may be on the first insulating layer645. The second insulating layer 646 may be on the same layer as thesecond gate insulating film 613. The second insulating layer 646 may beformed with the second gate insulating film 613 in the same process. Thesecond insulating layer 646 may be formed of the same material as thesecond gate insulating film 613.

The third insulating layer 647 may be arranged on the second insulatinglayer 646. The third insulating layer 647 may be on the same layer asthe interlayer insulating film 615. The third insulating layer 647 maybe formed with the interlayer insulating film 615 in the same process.The third insulating layer 647 may be formed of the same material as theinterlayer insulating film 615.

When the organic film 634 in the TFE layer 632 is above the displaysubstrate 601, an insulating dam 640 may be in at least one layer in theinactive area IAA to prevent an organic material in a liquid state fromflowing in a direction toward an undesirable area of the displaysubstrate 601. The insulating dam 640 may surround the active area AA.In one embodiment, a plurality of insulating dams 640 may be spacedapart a certain distance from one another.

The insulating dam 640 may be a single layer or a multilayer. Theinsulating dam 640 may include a first insulating dam 641, a secondinsulating dam 642 on the first insulating dam 641, and a thirdinsulating dam 643 on the second insulating dam 642. In an embodiment,the insulating dam 640 may have, for example, a trilayer structure.

The first insulating dam 641 may be on the third insulating layer 647.The first insulating dam 641 may be on the same layer as the passivationlayer 623. The first insulating dam 641 may be formed with thepassivation layer 623 in the same process. The first insulating dam 641may include the same material as the passivation layer 623.

The second insulating dam 642 may be on the first insulating dam 641.The second insulating dam 642 may be on the same layer as the pixeldefining layer 624. The second insulating dam 642 may be formed with thepixel defining layer 624 in the same process. The second insulating dam642 may be formed of the same material as the pixel defining layer 624.

The third insulating dam 643 may be on the second insulating dam 642.The third insulating dam 643 may be formed with the spacer 631 in thesame process. The third insulating dam 643 may be formed of the samematerial as the spacer 631.

During manufacturing of the display apparatus 600, the intermediatelayer 627 in the OLED 625 (e.g., the common layer 627 b of at least oneof the HIL, the HTL, the ETL, or the EIL) and the second electrode 628are deposited on an entire surface from the active area AA to theinactive area IAA according to a pattern shape of a deposition mask. Thecommon layer 627 b and the second electrode 628 in the inactive area IAAmay be removed before the TFE layer 632 is formed. This is because thecommon layer 627 b including an organic material and the secondelectrode 628 including a metal layer are relatively weak at moistureand oxygen.

If the common layer 627 b and the second electrode 628 directly cover anupper surface of the third insulating layer 647, during the formation ofthe hole area HA, moisture and oxygen may intrude into the active areaAA through the common layer 627 b and the second electrode 628.Accordingly, the common layer 627 b and the second electrode 628 in theinactive area IAA are removed and then the TFE layer 632 may be formedon the display substrate 601. In contrast, since the common layer 627 bon the outer surface of each of the insulating dams 640 does not coverthe upper surface of the third insulating layer 647, the common layer627 b may not be removed.

The common layer 627 b and the second electrode 628 in the inactive areaIAA may be removed by irradiating a laser beam from a laser apparatus.When a laser etching process is performed, the common layer 627 b andthe second electrode 628 may be easily removed.

The insulating dam 640 may be damaged by a laser beam. Accordingly,except an area where the insulating dam 640 is formed, the laser etchingprocess may be selectively performed on the inactive area IAA.

In an embodiment, the inactive area IAA may include a first area that isnot laser etched and a second area that is laser etched. The first areamay correspond to an area where each of the insulating dams 640 isarranged. The common layer 627 b may be on an outer surface of each ofthe insulating dams 640. Since the common layer 627 b on the outersurface of each of the insulating dams 640 does not cover the uppersurface of the third insulating layer 647, the common layer 627 b maynot be removed to improve an efficiency of the laser etching process.

The second area may correspond to an area between the neighboringinsulating dams 640 and an outermost area of the insulating dams 640. Alaser beam is irradiated onto the area between the neighboringinsulating dams 640 and the outermost area of the insulating dams 640 sothat the common layer 627 b may not be arranged.

After a TFE process, since the common layer 627 b is not in the areabetween the neighboring insulating dams 640 and the outermost area ofthe insulating dams 640, the intrusion of moisture and oxygen into theactive area AA through the common layer 627 b may be prevented.

In an embodiment, the second electrode 628 may be further arranged onthe outer surface of each of the insulating dams 640. The secondelectrode 628 may be arranged on the common layer 627 b. In anembodiment, a second electrode shield layer 751 in FIGS. 7A to 7C may befurther arranged on the outer surface of each of the insulating dams640.

FIGS. 7A to 7C are cross-sectional views showing operations of oneembodiment of a laser etching process performed on a display substrate701. Referring to FIG. 7A, the display substrate 701 is prepared. Abarrier layer 702, a first insulating layer 745, a second insulatinglayer 746, and a third insulating layer 747 are sequentially formed onand above the display substrate 701. An insulating dam 740 is formed onthe third insulating layer 747. For example, a first insulating dam 741is formed on the third insulating layer 747, a second insulating dam 742is formed on the first insulating dam 741, and a third insulating dam743 is formed on the second insulating dam 742. In one embodiment, aplurality of insulating dams 740 may be arranged spaced apart from eachother above the display substrate 701.

Next, a common layer 727 b in the intermediate layer 627 (e.g., see FIG.6 ) is formed across the active area AA and the inactive area IAA. Inthe inactive area IAA, the common layer 727 b is formed on both of anupper surface of the third insulating layer 747 and an outer surface ofthe insulating dam 740. In an embodiment, an emissive layer in theintermediate layer 627 may be patterned on each sub-pixel arranged inthe active area AA.

Next, the second electrode shield layer 751 is selectively formed on thecommon layer 727 b. The second electrode shield layer 751 functions as amask with respect to the second electrode 628 (e.g., see FIG. 6 ). Thesecond electrode shield layer 751 may be formed of various materials toprevent the formation of the second electrode 628. The second electrodeshield layer 751 may include a material that is not mixed with thesecond electrode 628, for example, an organic material. In anembodiment, the second electrode shield layer 751 may be a blue hostused for the intermediate layer 627.

Next, the second electrode 628 is selectively formed across the activearea AA and the inactive area IAA. The second electrode 628 is formed inan area other than the area where the second electrode shield layer 751is formed. For example, the second electrode 628 may be entirely formedin the active area AA where the second electrode shield layer 751 doesnot exist. The second electrode 628 is not formed in the inactive areaIAA where the second electrode shield layer 751 exists.

Next, a laser beam L is irradiated to the area other than the area wherethe insulating dam 740 is arranged, e.g., the area between theneighboring insulating dams 740 and the outermost area of the insulatingdams 740. Accordingly, the common layer 727 b is removed by the laseretching. In an embodiment, the second electrode shield layer 751 may besimultaneously removed when the common layer 727 b is removed. Inanother embodiment, the second electrode shield layer 751 may beseparately removed by a heating device prior to the removal of thecommon layer 727 b.

Referring to FIG. 7B, the common layer 727 b is not formed in the areabetween the neighboring insulating dams 740, except the area where theinsulating dams 740 are formed, and the outermost area of the insulatingdams 740, above the display substrate 701. Also, the common layer 727 bin the active area AA and the inactive area IAA may be separated fromeach other to prevent the intrusion of moisture and oxygen into theactive area AA, as in FIG. 6 .

Referring to FIG. 7C, a first inorganic film 735, a first organic film738, a second inorganic film 736, a second organic film 739, and a thirdinorganic film 737 are sequentially stacked on and above the displaysubstrate 701. In the inactive area IAA, the second electrode 628 may beformed on the common layer 727 b when the second electrode shield layer751 does not exist. The second electrode 628 may be selectively removedwith the common layer 727 b by the laser etching.

FIG. 8 is a cross-sectional view of a part of another embodiment of adisplay apparatus 800. Referring to FIG. 8 , the display apparatus 800may include a display substrate 801. The display substrate 801 mayinclude the active area AA and the inactive area IAA. The hole area HAmay be in the display substrate 801. A barrier layer 802 may be on thedisplay substrate 801. A first insulating layer 845 may be on thebarrier layer 802. A second insulating layer 846 may be on the firstinsulating layer 845. A third insulating layer 847 may be on the secondinsulating layer 846. The barrier layer 802, the first insulating layer845, the second insulating layer 846, and the third insulating layer 847may extend across the active area AA and the inactive area IAA.

In the active area AA, a power wiring 829 may be on the third insulatinglayer 847. A circuit wiring 830 may be on the power wiring 829. A commonlayer 827 a in the intermediate layer 627 may be on the circuit wiring830. A second electrode 831 may be on the common layer 827 a.

In the inactive area IAA, an insulating dam 840 may be on the thirdinsulating layer 847. The insulating dam 840 may include a firstinsulating dam 841, a second insulating dam 842 on the first insulatingdam 841, and a third insulating dam 843 on the second insulating dam842. The insulating dam 840 may have, for example, a trilayer structure.

The inactive area IAA may include a first area that is not laser etchedand a second area that is laser etched. The first area may correspond toan area where the insulating dam 840 is arranged and an area between theneighboring insulating dams 840. A common layer 827 b may be on an outersurface of the insulating dam 840 and the neighboring insulating dams840. The common layer 827 b on the outer surface of the insulating dam840 may be connected to the neighboring insulating dams 840.

The second area may correspond to the outermost area of the insulatingdams 840. The common layer 827 b may not be formed by laser etching inthe outermost area of the insulating dams 840. In an embodiment, thecommon layer 827 a in the active area AA and the common layer 827 b inthe inactive area IAA may be separated from each other. The secondelectrode 831 may not be formed in the inactive area IAA.

As such, in the inactive area IAA, since the common layer 827 a and thesecond electrode 831 do not exist in the outermost area of theinsulating dams 840, which is laser etched, except the area where theinsulating dam 840 is arranged and the area between the neighboringinsulating dams 840, which are not laser etched, the intrusion ofmoisture and oxygen into the active area AA may be prevented.

FIG. 9 is a cross-sectional view of a part of another embodiment of adisplay apparatus 900. Referring to FIG. 9 , the display apparatus 900may include a display substrate 901 having the active area AA and theinactive area IAA. A barrier layer 902, a first insulating layer 945, asecond insulating layer 946, and a third insulating layer 947 may bestacked on and above the display substrate 901. The barrier layer 902,the first insulating layer 945, the second insulating layer 946, and thethird insulating layer 947 may extend across the active area AA and theinactive area IAA.

In the active area AA, a power wiring 929, a circuit wiring 930, acommon layer 927 a, and a second electrode 931 a may be stacked on andabove the display substrate 901. The stacked portion may correspond to acircuit area.

In the inactive area IAA, a plurality of insulating dams 940 may be onthe third insulating layer 947. Each of the insulating dams 940 mayinclude a first insulating dam 941, a second insulating dam 942 on thefirst insulating dam 941, and a third insulating dam 943 on the secondinsulating dam 942. The inactive area IAA may include a first area thatis not laser etched and a second area that is laser etched.

The first area may correspond to an area where the insulating dams 940are arranged. A common layer 927 b may be on an outer surface of each ofthe insulating dams 940. In an embodiment, a second electrode 931 b maybe on common layer 927 b.

The second area may correspond to an area between the neighboringinsulating dams 940 and an outermost area of the insulating dams 940.The common layer 927 b and second electrode 931 b may not be in the areabetween the neighboring insulating dams 940 and the outermost area ofthe insulating dams 940 by the laser etching.

In an embodiment, the common layer 927 a in the active area AA and thecommon layer 927 b in the inactive area IAA may be separated from eachother. In an embodiment, the second electrode 931 a in the active areaAA and the second electrode 931 b in the inactive area IAA may beseparated from each other.

As such, in the inactive area IAA, since the common layer 927 b and thesecond electrode 931 b are not in the area between the neighboringinsulating dams 940 and the outermost area of the insulating dam 940,which are laser etched, except the area where the insulating dams 940are arranged, which is not laser etched, the intrusion of moisture andoxygen into the active area AA may be prevented.

FIG. 10 is a cross-sectional view of a part of another embodiment of adisplay apparatus 1000. Referring to FIG. 10 , the display apparatus1000 may include a display substrate 1001 having the active area AA andthe inactive area IAA. The display apparatus 1000 may include the holearea HA.

A barrier layer 1002, a first insulating layer 1045, a second insulatinglayer 1046, and a third insulating layer 1047 may be stacked on andabove the display substrate 1001. The barrier layer 1002, the firstinsulating layer 1045, the second insulating layer 1046, and the thirdinsulating layer 1047 may extend across the active area AA and theinactive area IAA.

In the active area AA, a power wiring 1029, a circuit wiring 1030, acommon layer 1027 a may be in the intermediate layer 627, and a secondelectrode 1031 a may be stacked on and above the third insulating layer1047. A stack structure may be in a circuit area to which power issupplied.

In the inactive area IAA, an insulating dam 1040 may be on the thirdinsulating layer 1047. The insulating dam 1040 may include a firstinsulating dam 1041, a second insulating dam 1042 on the firstinsulating dam 1041, and a third insulating dam 1043 on the secondinsulating dam 1042.

The inactive area IAA may include a first area that is not laser etchedand a second are that is laser etched. The first are may correspond tothe area where the insulating dam 1040 is arranged and the area betweenthe neighboring insulating dams 1040. A common layer 1027 b may be on anouter surface of the insulating dam 1040 and between the neighboringinsulating dams 1040. The common layer 1027 b on the outer surface ofthe insulating dam 1040 and between the neighboring insulating dams 1040may be connected to each other.

A second electrode 1031 b may be on the common layer 1027 b. The secondelectrode 1031 b may be on the outer surface of the insulating dam 1040and between the neighboring insulating dams 1040.

The second area may correspond to the outermost area of the insulatingdams 1040. The common layer 1027 b and the second electrode 1031 b maynot be formed in the outermost area of the insulating dams 1040 by thelaser etching.

In an embodiment, the common layer 1027 a in the active area AA and thecommon layer 1027 b in the inactive area IAA may be separated from eachother. In an embodiment, the second electrode 1031 a in the active areaAA and the second electrode 1031 b in the inactive area IAA may beseparated from each other.

As such, in the inactive area IAA, since the common layer 1027 a and thesecond electrode 1031 b are not formed in the outermost area of theinsulating dam 1040, which is laser etched, except for the area wherethe insulating dam 1040 is arranged and the area between the neighboringinsulating dams 1040, which are not laser etched, the intrusion ofmoisture and oxygen into the active area AA may be prevented.

During the laser etching, a laser beam may have a bad influence on thedisplay substrates 601 to 1001. The display substrates 601 to 1001 maybe protected from the laser beam. Accordingly, in the inactive area IAA,a plurality of laser shield layers may be arranged on at least one ofthe insulating layers corresponding to the area between the neighboringinsulating dams.

FIG. 11 illustrates another embodiment of a display apparatus 1100 whichmay include a display substrate 1101 having the active area AA and theinactive area IAA. A barrier layer 1102, a first insulating layer 1145,a second insulating layer 1146, and a third insulating layer 1147 may bearranged on and above the display substrate 1101.

In the active area AA, a power wiring 1129, a circuit wiring 1130, acommon layer 1127 a may be provided on the intermediate layer 627, and asecond electrode 1131 may be stacked on and above the third insulatinglayer 1147. A stack structure may be arranged in a circuit area.

In the inactive area IAA, an insulating dam 1140 may be arranged on thethird insulating layer 1147. The insulating dam 1140 may include a firstinsulating dam 1141, a second insulating dam 1142 on the firstinsulating dam 1141, and a third insulating dam 1143 on the secondinsulating dam 1142. The inactive area IAA may include a first are thatis not laser etched and a second area that is laser etched.

The first area may correspond to an area where the insulating dam 1140is arranged. A common layer 1127 b may be on an outer surface of theinsulating dam 1140.

The second area may correspond to an area between the neighboringinsulating dams 1140 and an outermost area of the insulating dams 1140.The common layer 1127 b may not be in the area between the neighboringinsulating dams 1140, and the outermost area of the insulating dams 1140by the laser etching. In an embodiment, a common layer 1127 a in theactive area AA and the common layer 1127 b in the inactive area IAA maybe separated from each other. In an embodiment, a second electrode 1131may not be in the inactive area IAA.

A plurality of laser shield layers 1150 may be in the inactive area IAA.The laser shield layers 1150 may be in the area that is laser etched. Inan embodiment, the laser shield layers 1150 may be on at least one ofthe first to third insulating layers 1145 to 1147 corresponding to thearea between the neighboring insulating dams 1140 and the outermost areaof the insulating dams 1140.

A plurality of first laser shield layers 1151 may be spaced apart fromone another on the first insulating layer 1145. The first laser shieldlayer 1151 may be arranged corresponding to the area between theneighboring insulating dams 1140 and the outermost area of theinsulating dams 1140. The first laser shield layer 1151 may be on thesame layer as the first gate electrode 612 of FIG. 6 . The first lasershield layer 1151 may be formed with the first gate electrode 612 in thesame process. The first laser shield layer 1151 may be formed of thesame material as the first gate electrode 612.

A plurality of second laser shield layers 1152 may be on the secondinsulating layer 1146. The second laser shield layers 1152 may be spacedapart from one another. The second laser shield layers 1152 maycorrespond to the area between the neighboring insulating dams 1140 andthe outermost area of the insulating dams 1140.

The second laser shield layers 1152 may be on the same layer as thesecond gate electrode 614 of FIG. 6 . The second laser shield layers1152 may be formed with the second gate electrode 614 in the sameprocess. The second laser shield layers 1152 may be formed of the samematerial as the second gate electrode 614.

The first laser shield layers 1151 and the second laser shield layers1152 may include a reflective material to prevent damage of the displaysubstrate 1101 due to a laser beam during the laser etching process. Forexample, the first laser shield layers 1151 and the second laser shieldlayers 1152 may be reflective layers having a thin thickness and formedof a metal material. The first laser shield layers 1151 and the secondlaser shield layers 1152 may not be electrically connected to the activearea AA. In an embodiment, a certain power may not be applied to thefirst laser shield layers 1151 and the second laser shield layers 1152.

In an embodiment, the first laser shield layers 1151 and the secondlaser shield layers 1152 may overlap each other. For example, the firstlaser shield layers 1151 may be on the first insulating layer 1145 andspaced apart from one another. The second laser shield layers 1152 maybe on the second insulating layer 1146 and spaced apart from oneanother. The first laser shield layers 1151 and the second laser shieldlayers 1152 may be at least partially overlap each other in thedirection crossing the display substrate 1101.

Accordingly, during the laser etching process, even when a laser beam isirradiated onto the display substrate 1101, the laser beam is reflectedby the first laser shield layers 1151 and second laser shield layers115, which overlap each other. Thus, the laser beam may not intrude intothe display substrate 1101. In another embodiment, a laser shield layermay be selectively formed in an area to which a laser beam isirradiated. For example, a laser shield layer may be formed on an outersurface of the insulating dam 1140 to prevent damage to the insulatingdam 1140.

In accordance with one or more of the aforementioned embodiments, laseretching is selectively performed in an inactive area close to a holearea. As a result, the efficiency of a method for manufacturing anorganic light-emitting display device may be improved.

Example embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation. In someinstances, as would be apparent to one of ordinary skill in the art asof the filing of the present application, features, characteristics,and/or elements described in connection with a particular embodiment maybe used singly or in combination with features, characteristics, and/orelements described in connection with other embodiments unless otherwisespecifically indicated. Accordingly, it will be understood by those ofskill in the art that various changes in form and details may be madewithout departing from the spirit and scope of the present invention asset forth in the following claims.

What is claimed is:
 1. A method for fabricating an organiclight-emitting display apparatus, the method comprising: preparing asubstrate, the substrate comprising a hole area, an active area, and aninactive area between the hole area and the active area; forming anorganic light-emitting element on the substrate, the forming the organiclight-emitting element comprising: forming a first electrode in theactive area; forming an intermediate layer, the intermediate layercomprising an emission layer in the active area and a common layer inthe active area and the inactive area; and forming a second electrode onthe intermediate layer; and removing at least a part of the common layerso that the common layer comprises a first portion between the firstelectrode and the second electrode in the active area and a plurality ofsecond portions arranged in the inactive area.
 2. The method as claimedin claim 1, wherein the removing at least a part of the common layercomprises: irradiating a laser beam to the inactive area.
 3. The methodas claimed in claim 2, wherein the second electrode is formed in theactive area and the inactive area in the forming the second electrode,wherein the method further comprises: removing at least a part of thesecond electrode that is in the inactive area by the laser beam.
 4. Themethod as claimed in claim 3, wherein after the removing at least a partof the second electrode, the second electrode comprises a first portionin the active area and a plurality of second portions arranged in theinactive area.
 5. The method as claimed in claim 1, further comprising:forming a first dam and a second dam in the inactive area, wherein theremoving at least a part of the common layer comprises: removing a partof the common layer that is located between the first dam and the seconddam.
 6. The method as claimed in claim 5, wherein: one of the pluralityof second portions of the common layer is on an upper surface of thefirst dam, and another one of the plurality of second portions of thecommon layer is on an upper surface of the second dam.
 7. The method asclaimed in claim 1, further comprising: forming an encapsulation layer,the encapsulation layer comprising a first inorganic layer and anorganic layer, wherein the first inorganic layer and the organic layeroverlap the organic light-emitting element in the active area.
 8. Themethod as claimed in claim 7, wherein the first inorganic layer of theencapsulation layer covers the first portion and the plurality of secondportions of the common layer.
 9. The method as claimed in claim 7,wherein a portion of the organic layer of the encapsulation layeroverlaps a first gap region, wherein the first gap region is a regionbetween an edge of the first portion of the common layer and an edge ofa second portion that is located closest to the active area from amongthe plurality of second portions of the common layer.